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NPN Transistor IE= 0 VEB= 3V; IC= 0 IC= 50mA; VCE= -10V KSE340 MIN TYP. MAX UNIT 100 μA 100 μA 30 240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is p |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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PNP Transistor Gain CONDITIONS VCB= -300V; IE= 0 VEB= -3V; IC= 0 IC=- 50mA; VCE= -10V KSE350 MIN TYP. MAX UNIT -100 μA -100 μA 30 240 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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PNP Transistor FE-1 DC Current Gain IC=- 1.5A; VCE= -3V hFE-2 DC Current Gain IC=- 4A; VCE= -3V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB=- 30mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(ON)-1 Base-Emitter On |
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PNP Transistor Voltage IC= -10mA; IB= 0 -25 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.75 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -5A; IB= |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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INCHANGE |
NPN Transistor cified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage KSE44H1,4,7,10 KSE44H2,5,8,11 VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current KSE44H1,4,7,10 hFE DC Current Gain KS |
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Silicon PNP Power Transistor own Voltage VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain *:Pulse test PW≤300us,duty cycle≤2% CON |
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Desde 2024. D4U Semiconductor.
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