KSE350 |
Part Number | KSE350 |
Manufacturer | INCHANGE |
Description | ·High Collector-Emitter breakdown voltage ·Low Collector Saturation Voltage ·Complement to Type KSE340 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
Features |
Gain
CONDITIONS VCB= -300V; IE= 0 VEB= -3V; IC= 0 IC=- 50mA; VCE= -10V
KSE350
MIN TYP. MAX UNIT
-100 μA
-100 μA
30
240
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospac... |
Document |
KSE350 Data Sheet
PDF 183.28KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | KSE350 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
2 | KSE3055T |
Fairchild Semiconductor |
NPN Silicon Transistor | |
3 | KSE3055T |
Samsung |
NPN Silicon Transistot | |
4 | KSE340 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
5 | KSE340 |
INCHANGE |
NPN Transistor | |
6 | KSE05VL4-C |
SeCoS |
Transient Voltage Suppressors for ESD Protection |