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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode powe |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAX |
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INCHANGE |
N-Channel MOSFET ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching App |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power |
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INCHANGE |
N-Channel MOSFET ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching App |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 180mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode pow |
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INCHANGE |
N-Channel MOSFET ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 290mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Appl |
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INCHANGE |
N-Channel MOSFET ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching App |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 0.2Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode powe |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode pow |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode powe |
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Desde 2024. D4U Semiconductor.
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