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IXKP24N60C5 |
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| Part Number | IXKP24N60C5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IXKP24N60C5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 24 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(... |
| Document |
 IXKP24N60C5 Data Sheet
PDF 246.32KB |
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Desde 2024. D4U Semiconductor.
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