INCHANGE FMV Hoja de datos

No.	parte #	Fabricante	Descripción
1	FMV09N70E	INCHANGE	N-Channel MOSFET ·drain-source on-resistance: RDS(on) ≤ 1.4Ω (max) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching regulators ·UPS (Uninterruptible Power Supply) ·
2	FMV12N50E	INCHANGE	N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC con
3	FMV11N60E	INCHANGE	N-Channel MOSFET ·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching a
4	FMV20N60S1	INCHANGE	N-Channel MOSFET ·Low on-resistance: RDS(on) ≤ 0.19Ω (max) ·Low switching loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·UPS (Uninterruptible Power Supply) ·Power conditioner system ·Power
5	FMV60N190S2HF	INCHANGE	N-Channel MOSFET ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION