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FMV11N60E |
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| Part Number | FMV11N60E |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMV11N60E ·FEATURES ·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very high commutation ruggedness ·Easy to use ·100% av... |
| Features |
·With TO-220F packaging ·Maintains both low power loss andlow noise ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 44 PD Total Dissipation 65 Tj Operating Junction Temperature -55~150 Tstg Storage Tempe... |
| Document |
 FMV11N60E Data Sheet
PDF 197.37KB |
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Desde 2024. D4U Semiconductor.
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