INCHANGE FJP Hoja de datos

No.	parte #	Fabricante	Descripción
1	FJPF5027	INCHANGE	NPN Transistor ltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE
2	FJPF5021	INCHANGE	NPN Transistor CE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.6A;
3	FJP3305	INCHANGE	Silicon NPN Transistor IE = 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 V(BR)EBO Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VCE(sat) -2 Collector-Emitter Saturation Voltage IC
4	FJP5027	INCHANGE	NPN Transistor oltage IE= 1mA; IC= 0 7 V BVCEO Collector- Emitter Breakdown Voltage IC= 5mA; IB= 0 800 V BVCBO Collector- Base Breakdown Voltage IC= 1mA; IE= 0 1100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-
5	FJP13009	INCHANGE	Silicon NPN Power Transistor ICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise speci