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FJP13009 |
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| Part Number | FJP13009 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
ICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.25
UNIT ℃/W
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VCE(sat)-3 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emit... |
| Document |
 FJP13009 Data Sheet
PDF 228.69KB |
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Desde 2024. D4U Semiconductor.
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