| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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INCHANGE |
N-Channel MOSFET ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABS |
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INCHANGE |
N-Channel MOSFET ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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INCHANGE |
N-Channel MOSFET ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABS |
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INCHANGE |
N-Channel MOSFET ·With To-3P package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM |
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INCHANGE |
N-Channel MOSFET ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃ |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 49mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 63.3A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.048Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio |
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Desde 2024. D4U Semiconductor.
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