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FDA50N50 |
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| Part Number | FDA50N50 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an... |
| Features |
·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 192 PD Total Dissipation 625 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c... |
| Document |
 FDA50N50 Data Sheet
PDF 211.22KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDA50N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
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| 2 | FDA50N50 |
ON Semiconductor |
N-Channel MOSFET |
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| 3 | FDA59N25 |
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| 4 | FDA59N25 |
Inchange Semiconductor |
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| 5 | FDA59N30 |
Fairchild Semiconductor |
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| 6 | FDA59N30 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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