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| Part Number | FDA59N30 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FDA59N30 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor FDA59N30 ·FEATURES ·With To-3P package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIM. |
| Features |
·With To-3P package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Dr. |
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| 2 | FDA59N25 |
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| 7 | FDA0801A |
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| 8 | FDA0802A |
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| 9 | FDA0802D |
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| 10 | FDA0802E |
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Desde 2024. D4U Semiconductor.
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