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INCHANGE |
NPN Transistor age IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Curre |
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INCHANGE |
2SC5248 n Voltage IC= 1mA; IB= 0 B 160 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 IE= 50μA; IC= 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage 5 V VCE(sat) ICBO Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 1.0 V |
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INCHANGE |
Silicon NPN Power Transistor BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff |
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INCHANGE |
NPN Transistor B= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V ICBO Collector Cutoff Current VCB= 230V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; |
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INCHANGE |
NPN Transistor VCE(sat) Collector-Emitter Saturation Voltage IC= 1.8A; IB= 0.36A VBE(sat) Base-Emitter Saturation Voltage IC= 1.8A; IB= 0.36A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain |
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INCHANGE |
Silicon NPN Power Transistor IC=10A; IB=2.8A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB=2.8A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 10A; VCE= 5V 2SC5244 MIN TYP. MAX UNIT 800 V 3 |
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INCHANGE |
NPN Transistor VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Curre |
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INCHANGE |
NPN Transistor er Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= |
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INCHANGE |
NPN Transistor S V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter |
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NPN Transistor ollector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Cur |
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Inchange Semiconductor |
Silicon NPN Power Transistor IB= 3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 3A 1.5 V ICBO Collector Cutoff Current VCB= 1500V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 35 hFE-2 |
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Inchange Semiconductor |
Silicon NPN Transistor 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 5V ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 5V; f= 1GHz ︱S21e︱2 Insertion Power Gain IC= 3mA ; VCE= 2V; f= 1GHz fT Current-Gain—Bandwidth Product IC= 20 |
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Inchange Semiconductor |
Silicon NPN Transistor 10μA ; IE= 0 15 V ICBO Collector Cutoff Current VCB= 12V; IE= 0 1 μA ICEO Collector Cutoff Current VCE= 9V; RBE= ∞ 1 mA IEBO Emitter Cutoff Current VEB= 1.5V; IC= 0 10 μA hFE DC Current Gain IC= 20mA ; VCE= 5V 50 250 fT Curren |
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Inchange Semiconductor |
Silicon NPN Power Transistors r Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE |
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Inchange Semiconductor |
Silicon NPN Power Transistors AL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Vo |
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INCHANGE |
NPN Transistor ain IC= 20mA ; VCE= 6V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V Cre Feed-Back Capacitance IE= 0 ; VCB= 6V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 6V;f= 1.0GHz NF Noise Figure IC= 5mA ; VCE= 6V;f= 1.0GHz MIN TYP. |
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INCHANGE |
NPN Transistor kdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; |
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NPN Transistor r Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 600V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 4V 2SC5249 MIN T |
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NPN Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cut |
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NPN Transistor CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cutoff Cu |
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Desde 2024. D4U Semiconductor.
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