2SC5200N |
Part Number | 2SC5200N |
Manufacturer | INCHANGE |
Description | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943N ·Minimum Lot-to-Lot variations for robust device performa... |
Features |
CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A
VBE(on)
Base-Emitter On Voltage
IC= 7A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 230V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 7A ; VCE= 5V
2SC5200N
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
μA
5
μA
80
160
35
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented... |
Document |
2SC5200N Data Sheet
PDF 208.44KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors | |
5 | 2SC5200 |
ON Semiconductor |
NPN Transistor | |
6 | 2SC5200 |
STMicroelectronics |
NPN Transistor |