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Inchange Semiconductor |
2SC4148 tor-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE fT Collector cut-off current Emitter cut-off current DC current gain Transition frequency At |
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Inchange Semiconductor |
Silicon NPN Transistor B= 4mA ICBO Collector Cutoff Current VCB= 15V; IE= 0 ICEO Collector Cutoff Current VCE= 13V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE DC Current Gain IC= 5mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V |
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INCHANGE |
NPN Transistor Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 10V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB Output Capac |
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INCHANGE |
NPN Transistor Breakdown Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturatio |
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INCHANGE |
NPN Transistor 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A VBE(sat) Base-Emitter Saturation Voltage IC= 0.1A; IB= 0.01A ICBO Collector Cutoff Current VCB= 60V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain |
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Inchange |
Silicon NPN Power Transistor or-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current |
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INCHANGE |
Silicon NPN Power Transistor V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Coll |
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INCHANGE |
Silicon NPN Power Transistor oltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 400V; IE= 0 |
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INCHANGE |
Silicon NPN Power Transistor or-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.6A VBE(sat) Base-Emitter Sa |
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INCHANGE |
NPN Transistor oltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A ICBO Collector Cutoff Current VCB= 800V; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 |
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INCHANGE |
NPN Transistor mitter Breakdown Voltage IC= 25mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA |
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INCHANGE |
NPN Transistor down Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Volt |
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INCHANGE |
NPN Transistor wn Voltage IC= 5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltag |
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INCHANGE |
NPN Transistor AL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 400 V VCEX(SUS |
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INCHANGE |
NPN Transistor ss otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collecto |
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INCHANGE |
NPN Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collect |
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Inchange Semiconductor |
Silicon NPN Power Transistor r-Emitter Saturation Voltage IC= 0.4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.4A; IB= 40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cuto |
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Inchange Semiconductor |
Silicon NPN Power Transistor ion Voltage IC= 1.0A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1.0A; IB= 0.1A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= |
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Inchange Semiconductor |
Silicon NPN Transistor mA 0.3 V ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.3 μA ICEO Collector Cutoff Current VCE= 15V; RBE= ∞ 10 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA hFE DC Current Gain IC= 5mA ; VCE= 5V 50 180 fT Current-Gain—Ban |
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Inchange Semiconductor |
Silicon NPN Power Transistor DITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50 |
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Desde 2024. D4U Semiconductor.
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