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INCHANGE |
NPN Transistor ecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A ; |
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INCHANGE |
NPN Transistor specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitte |
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INCHANGE |
NPN Transistor therwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A VBE(sat) Bas |
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Inchange Semiconductor |
Silicon NPN Power Transistor IN BUH315D TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.5 |
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Desde 2024. D4U Semiconductor.
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