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BUH417D |
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| Part Number | BUH417D |
| Manufacturer | INCHANGE |
| Description | ·High Switching Speed ·High Voltage ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflect... |
| Features |
ecified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A ;IB= 1A
1.3
V
IEBO
Emitter Cutoff Current
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
VEB= 5V; IC=0
VCB= BVCBO ;IE= 0 VCB= BVCBO ;IE= 0;TC=125℃
IC= 1A ; VCE= 5V
8
200 mA
1.0 2.0
mA
36
hFE-2
DC Current Gain
IC= 4A ; VCE= 5V
6
VECF
C-E Diode Forward Voltage
IF= 4A
2.0
V
NOTICE： ISC reserves the rights to make changes ... |
| Document |
 BUH417D Data Sheet
PDF 209.44KB |
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Desde 2024. D4U Semiconductor.
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