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Inchange Semiconductor |
Silicon NPN Power Transistor se specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat |
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INCHANGE |
NPN Transistor or ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-E |
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INCHANGE |
NPN Transistor stor BU406D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A |
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INCHANGE |
NPN Transistor sistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter S |
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INCHANGE |
NPN Transistor tage IE= 1mA ;IC= 0 ICBO Collector Cutoff Current VCB= 800V; IE=0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2.5A hFE DC Cu |
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INCHANGE |
NPN Transistor ICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 50mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 |
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INCHANGE |
NPN Transistor ient 55 ℃/W BU406F/407F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitt |
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INCHANGE |
NPN Transistor ltage IE= 1mA ;IC= 0 ICBO Collector Cutoff Current VCB= 400V; IE=0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2.5A hFE DC C |
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INCHANGE |
NPN Transistor /W BU407 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vol |
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INCHANGE |
NPN Transistor /W BU408 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Vol |
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Inchange Semiconductor |
Silicon NPN Power Transistor ARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation |
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INCHANGE |
NPN Transistor ient 55 ℃/W BU406F/407F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitt |
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INCHANGE |
NPN Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector- |
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INCHANGE |
NPN Transistor 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU406 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA |
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INCHANGE |
NPN Transistor stor BU426AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= |
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INCHANGE |
NPN Transistor scsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BU406FI BU407FI IC= |
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INCHANGE |
NPN Transistor d trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage |
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Inchange Semiconductor |
Silicon NPN Power Transistor tor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4525AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage |
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Inchange Semiconductor |
Silicon NPN Power Transistor r Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4522AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown |
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INCHANGE |
NPN Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V |
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Desde 2024. D4U Semiconductor.
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