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BU406H |
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| Part Number | BU406H |
| Manufacturer | INCHANGE |
| Description | ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for u... |
| Features |
d trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5A; IB= 0.5A
VCE= 400V; VBE= 0 VCE=250V; VBE= 0
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
tf
Fall Time
IC= 5A; IB1= -IB2= 0.8A
BU406H
MIN TYP. MAX UNIT
... |
| Document |
 BU406H Data Sheet
PDF 207.29KB |
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Desde 2024. D4U Semiconductor.
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