| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
Silicon PNP Power Transistor 25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; I |
|
|
|
|
INCHANGE |
NPN Transistor isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX53C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. M |
|
|
|
|
INCHANGE |
NPN Transistor otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A V |
|
|
|
|
INCHANGE |
NPN Transistor gton Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(on) |
|
|
|
|
INCHANGE |
PNP Transistor i.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collecto |
|
|
|
|
INCHANGE |
PNP Transistor i.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collecto |
|
|
|
|
INCHANGE |
NPN Transistor i is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Em |
|
|
|
|
INCHANGE |
PNP Transistor i.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collecto |
|
|
|
|
INCHANGE |
PNP Transistor mi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 |
|
|
|
|
INCHANGE |
NPN Transistor iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Colle |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX63 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63A |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Darlington Power Transistor & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX63 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX63A |
|
|
|
|
INCHANGE |
PNP Transistor i.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collecto |
|
|
|
|
INCHANGE |
PNP Transistor 8 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 |
|
|
|
|
INCHANGE |
PNP Transistor csemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB |
|
|
|
|
INCHANGE |
PNP Transistor scsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -50mA; IB |
|
|
|
|
INCHANGE |
PNP Transistor ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 V |
|
|
|
|
INCHANGE |
NPN Transistor isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) |
|
|
|
|
INCHANGE |
PNP Transistor te：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDX16 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor ONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE |
|
Desde 2024. D4U Semiconductor.
|