Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BDX66B |
| Part Number | BDX66B |
| Manufacturer | Comset Semiconductors |
| Title | PNP SILICON DARLINGTONS POWER TRANSISTOR |
| Description | BDX66 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary NPN are BDX67, BDX67A, BDX67B, BDX67C. Compliance to RoHS. . |
| Features | ymbol Ratings Test Condition(s) BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A BDX66B BDX66C BDX66 BDX66A Min 60 80 100 120 - Typ 2000 Max 3 Unit -VCEO(SUS) Collector-Emitter Breakdown -IC=0.1 A L=25mH Voltage (*) -VCE=30 V -VCE=40 V -VCE=50 V -VCE=60 V -VBE=5 V -VCB=60 V -VCB=40 V TCASE=200°C -VCB=80 V -VCB=50 V TCASE=200°C www.DataSheet.net/ V -ICEO Collector Cutof. |
BDX66B |
| Part Number | BDX66B |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High current ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj . |
| Features | erwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current CONDITIONS IC=-0.1A ; IB=0;L=25mH IC=-10A ;IB=-40mA VCB=-60V; IE=0 TC=150 VCE=-50V; IB=0 VEB=-5V; IC=0 MIN -100 -2 -1 -5 -3 -5 TYP. MAX UNIT V V mA mA mA SYMBOL VCEO(SUS) VCEsat ICBO ICEO IEBO Switching times ton toff Tur. |
BDX66B |
| Part Number | BDX66B |
| Manufacturer | TT |
| Title | PNP DARLINGTON SILICON POWER TRANSISTOR |
| Description | PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg BDX66 66A 66B 66C Col. |
| Features | ssumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 8760 Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX66 |
Seme LAB |
Bipolar PNP Device |
|
| 2 | BDX66 |
INCHANGE |
PNP Transistor |
|
| 3 | BDX66 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BDX66 |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR |
|
| 5 | BDX66 |
Comset Semiconductors |
PNP SILICON DARLINGTONS POWER TRANSISTOR |
|
| 6 | BDX66A |
INCHANGE |
PNP Transistor |
|
| 7 | BDX66A |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR |
|
| 8 | BDX66A |
Comset Semiconductors |
PNP SILICON DARLINGTONS POWER TRANSISTOR |
|
| 9 | BDX66C |
INCHANGE |
PNP Transistor |
|
| 10 | BDX66C |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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