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NPN Transistor er Transistor BD539D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE( |
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NPN Transistor METER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VCE(sat)-3 Collector-Emitter Satu |
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Inchange Semiconductor |
Silicon NPN Power Transistors e IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICER Collector Cutoff Current IC= 4A ;VCE= 4V VCE= 110V; RBE= 100Ω ICEO Collector Cutoff Current VCE= 95V; IB= 0 IEBO Emitter |
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Silicon NPN Power Transistors se specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD501 BD501B IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD501 IC= 5A; IB= 0.5A BD501B IC= 3.5A; IB= 0.35A VBE(on) BD501 Base-Emitte |
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Silicon NPN Power Transistors se specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD501 BD501B IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD501 IC= 5A; IB= 0.5A BD501B IC= 3.5A; IB= 0.35A VBE(on) BD501 Base-Emitte |
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Inchange Semiconductor |
Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle |
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Inchange Semiconductor |
Silicon PNP Power Transistors site：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD544/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD544 -40 V(BR)CEO Colle |
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NPN Transistor .iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD543 V(BR)CEO Collector-Emitter Breakdown Voltage BD543A BD543B |
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NPN Transistor .iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD543 V(BR)CEO Collector-Emitter Breakdown Voltage BD543A BD543B |
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NPN Transistor Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD545/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM |
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INCHANGE |
NPN Transistor Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD545/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAM |
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INCHANGE |
NPN Transistor Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A VCE(sat)-2 Coll |
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NPN Transistor registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturat |
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NPN Transistor Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VCE(sat) |
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PNP Transistor NP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A VCE |
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PNP Transistor icon PNP Power Transistor BD534 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage VCE(sat)-1 Collector-Emitter Voltage VCE(sat)-2 Collector-Emitter Voltage Sustain |
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Inchange Semiconductor |
Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME |
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Inchange Semiconductor |
Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME |
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Inchange Semiconductor |
Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME |
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Inchange Semiconductor |
Silicon PNP Power Transistor e 1.47 ℃/W Rth j-c Thermal Resistance,Junction to Ambient 35.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAME |
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Desde 2024. D4U Semiconductor.
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