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BD537 |
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| Part Number | BD537 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 40@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD538 ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 2A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
ICES
Collector Cutoff Current
VCE= 80V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10mA ; VCE= 5V
hFE-2
DC Curr... |
| Document |
 BD537 Data Sheet
PDF 188.57KB |
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Desde 2024. D4U Semiconductor.
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