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NPN Transistor NGE Semiconductor BD331 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE( |
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NPN Transistor NGE Semiconductor BD333 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE( |
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NPN Transistor stor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Sat |
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NPN Transistor RISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.5 V VBE(on)-1 Base |
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PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD368 CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB=0 80 V VCE(sat)-1 Collector-Emitter Saturation |
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NPN Transistor istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Sa |
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NPN Transistor Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Bas |
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Inchange Semiconductor |
Silicon PNP Power Transistor ors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage (1) VCE(sat)-1 Collector-Emitter Saturation Voltage CONDITIONS IC= -50mA ;IB= 0 IC= -10A; IB= -1 A VCE(sat)-2 Coll |
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Silicon PNP Power Transistor icon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A |
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PNP Transistor ilicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-30mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A |
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NPN Transistor NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(sat) |
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NPN Transistor ge BD375 BD377 BD379 BD375 VCBO Collector-Base Voltage BD377 BD379 VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage BD375 ICBO Collector Cutoff Current BD377 BD379 IEBO Emitter Cutoff Current hFE-1 DC Curre |
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PNP Transistor US) Collector-Emitter Sustaining Voltage BD376 BD378 BD380 IC= -30mA ; IB= 0 BD376 VCBO Collector-Base Voltage BD378 IC= -0.1mA ; IE= 0 BD380 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage I |
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PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor BD366 CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;IB=0 60 V VCE(sat)-1 Collector-Emitter Saturation |
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PNP Transistor METER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -1.5A VCE(sat)-3 Collector-Emitter S |
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Inchange Semiconductor Company Limited |
Silicon PNP Power Transistor er Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base |
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Inchange Semiconductor |
Silicon PNP Power Transistor HARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -20 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.5 V VBE |
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INCHANGE |
PNP Transistor INCHANGE Semiconductor BD332 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= -12 |
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PNP Transistor INCHANGE Semiconductor BD336 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= - |
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NPN Transistor HANGE Semiconductor BD335 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VB |
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Desde 2024. D4U Semiconductor.
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