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BD336 |
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| Part Number | BD336 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain ·Complement to type BD335 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·PNP epitaxial base transistors in monolithic Darlingt... |
| Features |
INCHANGE Semiconductor
BD336
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= -12mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -3A; VCE= -3V
VCB= -100V; IE= 0 VCB= -100V; IE= 0,TC=150℃
VEB= -5V; IC= 0
hFE-1*
DC Current Gain
IC= -0.5A; VCE= -3V
hFE-2*
DC Current Gain
IC= -3A; VCE=-3V
hFE-3*
DC Current Gain
IC= -6A; VCE= -3V
*:Measured under pulse conditions:tp<... |
| Document |
 BD336 Data Sheet
PDF 206.75KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD330 |
NXP |
PNP power transistor |
|
| 2 | BD330 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | BD331 |
ST Microelectronics |
Complementary Power Darlingtons |
|
| 4 | BD331 |
NXP |
Silicon Darlington Power Transistors |
|
| 5 | BD331 |
INCHANGE |
NPN Transistor |
|
| 6 | BD332 |
ST Microelectronics |
Complementary Power Darlingtons |
|
Desde 2024. D4U Semiconductor.
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