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INCHANGE |
PNP Transistor CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 5mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage IC= -7.5A; IB= 0.75A ICEO Collector Cutoff Current VCE=- 300V; |
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PNP Transistor or-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.5A ICEO Collector Cutoff Current VCE= -20V; IB= 0 ICBO Collector Cutoff Current |
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PNP Transistor MBOL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A VBE(sat) Base-Emitter Saturat |
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INCHANGE |
PNP Transistor OL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A VBE(sat) Base-Emitter Saturatio |
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INCHANGE |
PNP Transistor OL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A VBE(sat) Base-Emitter Saturatio |
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INCHANGE |
PNP Transistor OL PARAMETER CONDITIONS VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0 VEBO(BR) Emitter-Base Breakdown Voltage IE=- 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A VBE(sat) Base-Emitter Saturatio |
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PNP Transistor herwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3.0A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V ICBO Collector |
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INCHANGE |
PNP Transistor 3mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE=- 3mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=- 0.5A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -0.1A ICEO Collector Cutoff Current VCE=- 80V; IB |
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Desde 2024. D4U Semiconductor.
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