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3CD9A |
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| Part Number | 3CD9A |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
OL
PARAMETER
CONDITIONS
VCEO(BR) Collector-Emitter Breakdown Voltage IC=- 10mA ; IB= 0
VEBO(BR) Emitter-Base Breakdown Voltage
IE=- 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 7.5A; IB= -1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -7.5A; IB= -1.5A
ICEO
Collector Cutoff Current
VCE=- 30V; IB= 0
ICBO
Collector Cutoff Current
VCB=- 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -7.5A; VCE= -10V
MIN MAX UNIT
-30
V
-4
V
-2
V
-2
V
-3.0
mA
-1.0
mA
-1.0
mA
10
180
NOTICE： ISC reserves the rights to make chan... |
| Document |
 3CD9A Data Sheet
PDF 178.85KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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