Hitachi Semiconductor C43 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C4367	Hitachi Semiconductor	2SC4367 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Co
2	2SC4308	Hitachi Semiconductor	Silicon NPN Transistor = 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4308 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 200 0 5 4. 3. 3.0 2.5 2.0 1.5 100 0.1 400 200 0.5mA IB = 0
3	2SC4367	Hitachi Semiconductor	Silicon NPN Transistor µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Co
4	2SC4366	Hitachi Semiconductor	Silicon NPN Transistor mA VCE = 6 V, IC = 100 mA (pulse) VCE = 6 V, IC = 1 mA I C = 300 mA, IB = 30 mA (pulse) 2 2SC4366 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Cuttent IC (mA) Typical Output Characteristics 50 40 35 30 25 2