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Hitachi Semiconductor |
Silicon NPN Transistor = 0, f = 1 MHz VCE = 6 V, IC = 50 µA, Rg = 50 kΩ, f = 1 kHz Min 90 — — Typ — — — — — — 200 1.6 2 DC current tarnsfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — 1200 250 0.75 0.5 — — 10 — — — — — |
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Hitachi Semiconductor |
2SC1881 2.5 A, IB = 20 mA*1 VCC = 11 V, IC = 2 A, I B1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE www.DataSheet4U.com Area of S |
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Hitachi Semiconductor |
2SC1890 = 0, f = 1 MHz VCE = 6 V, IC = 50 µA, Rg = 50 kΩ, f = 1 kHz Min 90 — — Typ — — — — — — 200 1.6 2 DC current tarnsfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — 1200 250 0.75 0.5 — — 10 — — — — — |
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Hitachi Semiconductor |
NPN Transistor CC = 11 V, IC = 2 A, I B1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE Area of Safe Operation Maximum Collector Dissipatio |
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Hitachi Semiconductor |
Silicon NPN Transistor = 0, f = 1 MHz VCE = 6 V, IC = 50 µA, Rg = 50 kΩ, f = 1 kHz Min 90 — — Typ — — — — — — 200 1.6 2 DC current tarnsfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — 1200 250 0.75 0.5 — — 10 — — — — — |
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Hitachi Semiconductor |
8-bit Odd/Even Parity Generator/Checker odd/even outputs and control inputs to facilitate operation in either odd or even parity applications. Depending on whether even or odd parity is being generated or checked, the even or odd inputs can be utilized as the parity of 9th-bit input. The w |
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Hitachi Semiconductor |
8-bit Odd/Even Parity Generator/Checker odd/even outputs and control inputs to facilitate operation in either odd or even parity applications. Depending on whether even or odd parity is being generated or checked, the even or odd inputs can be utilized as the parity of 9th-bit input. The w |
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Hitachi Semiconductor |
Silicon NPN Transistor CC = 11 V, IC = 2 A, I B1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE Area of Safe Operation Maximum Collector Dissipatio |
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Hitachi Semiconductor |
Carry Lookhead Generator • Outputs Source/Sink 24 mA • HD74ACT182 has TTL-Compatible Inputs Pin Arrangement G1 1 P1 2 G0 3 P0 4 G3 5 P3 6 P 7 GND 8 (Top view) 16 VCC 15 P2 14 G2 13 Cn 12 Cn+X 11 Cn+y 10 G 9 Cn+z HD74AC182/HD74ACT182 Logic Symbol P0 G0 P1 G1 P2 G2 P3 |
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Hitachi Semiconductor |
Look-Ahead Carry Generator • • • • • High Speed Operation: tpd (Pn to P) = 11 ns typ (CL = 50 pF) High Output Current: Fanout of 10 LSTTL Loads Wide Operating Voltage: VCC = 2 to 6 V Low Input Current: 1 µA max Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = 25°C) |
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Hitachi Semiconductor |
NPN Transistor |
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Desde 2024. D4U Semiconductor.
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