Hitachi Semiconductor 526 Hoja de datos

No.	parte #	Fabricante	Descripción
1	5264165FTT75	Hitachi Semiconductor	HM5264165FTT75 • • • • • • • • 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable
2	HD14526B	Hitachi Semiconductor	Programmable Divide-by-N 4-bit Counter product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, tra
3	HM5264165F-75	Hitachi Semiconductor	64M LVTTL interface SDRAM • 3.3 V power supply • Clock frequency: 133 MHz/100 MHz (max) • LVTTL interface • Single pulsed RAS • 4 banks can operate simultaneously and independently • Burst read/write operation and burst read/single write operation capability • Programmable bu
4	HM5264805F-75	Hitachi Semiconductor	64M LVTTL interface SDRAM 133 MHz/100 MHz • • • • • • • • 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable
5	HM5264805F-A60	Hitachi Semiconductor	64M LVTTL interface SDRAM 133 MHz/100 MHz • • • • • • • • 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable
6	HM5264805F-B60	Hitachi Semiconductor	64M LVTTL interface SDRAM 133 MHz/100 MHz • • • • • • • • 3.3 V power supply Clock frequency: 133 MHz/100 MHz (max) LVTTL interface Single pulsed RAS 4 banks can operate simultaneously and independently Burst read/write operation and burst read/single write operation capability Programmable
7	2SJ526	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ526 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate
8	2SK1526	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1526, 2SK1527 Absolute Maximum Ratings (T