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2SJ526 |
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| Part Number | 2SJ526 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ526 Silicon P Channel MOS FET High Speed Power Switching ADE-208-579B (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • H... |
| Features |
• Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ526 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –12 –48 –12 –12 12 25 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch... |
| Document |
 2SJ526 Data Sheet
PDF 51.64KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ520 |
Sanyo Semicon Device |
P-Channel MOSFET |
|
| 2 | 2SJ522 |
Sanyo Semicon Device |
P-Channel MOSFET |
|
| 3 | 2SJ525 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ526 |
INCHANGE |
P-Channel MOSFET |
|
| 5 | 2SJ527 |
Renesas |
P-Channel MOSFET |
|
| 6 | 2SJ527 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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