Hitachi Semiconductor 3SK Hoja de datos

No.	parte #	Fabricante	Descripción
1	3SK298	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK298 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G
2	3SK317	Hitachi Semiconductor	UHF / VHF RF Amplifier • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “ZR-”. 3SK317 Absolute Maximum Ra
3	3SK296	Hitachi Semiconductor	Silicon N-Channel Dual-Gate MOSFET • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK296 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage G
4	3SK51	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET
5	3SK297	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK297 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage
6	3SK319	Hitachi Semiconductor	UHF RF Amplifier • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB –”. 3SK319 Absolute
7	3SK322	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gat
8	3SK186	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, VG2S = VDS = 0 VG2S = ±8 V, VG1S = VDS = 0 VDS = 6 V, VG2S = 3V, I D = 100 µA VDS = 6 V, VG1S = 3V, I D = 100 µA VDS = 6 V, VG2S = 3V, VG1S = 0 VDS = 6 V, VG2S = 3V, I D = 10 mA, f = 1 kHz VDS = 6 V, VG
9	3SK194	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET 0 MHz VDS = 6 V, VG2S = 3 V, I D = 10 mA, f = 900 MHz Test conditions I D = 200 µA, VG1S = VG2S = –5 V I G1 = ±10 µA, VG2S = VDS = 0 I G2 = ±10 µA, VG1S = VDS = 0 VG1S = ±8 V, V G2S = VDS = 0 VG2S = ±8 V, V G1S = VDS = 0 VDS = 10 V, VG2S = 3 V, I D =
10	3SK295	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK295 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage
11	3SK300	Hitachi Semiconductor	Silicon N-Channel Transistor • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source
12	3SK318	Hitachi Semiconductor	UHF RF Amplifier • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB –”. 3SK318 Absolut
13	3SK321	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 3SK321 Absolute Maximum Ratings (Ta = 25°C) It
14	3SK228	Hitachi Semiconductor	Silicon NPN Triple Diffused 10 µA, VG2S = VDS = 0 I G2 = –10 µA, VG1S = VDS = 0 VG1S = –5 V, VG2S = VDS = 0 VG2S = –5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 1 kHz V
15	3SK239A	Hitachi Semiconductor	GaAs Dual Gate MES FET • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain curr
16	3SK290	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET · Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Ratings (Ta = 25¡C) Item Drain to source voltage Gate 1 to sourc
17	3SK309	Hitachi Semiconductor	UHF RF Amplifier • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK –4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK309
18	3SK233	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit —————————————————————— – Drain to source voltage VDS 12 V —————————————————————— – Gate 1 to source voltag