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3SK318 |
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| Part Number | 3SK318 |
| Manufacturer | Hitachi Semiconductor |
| Description | 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulatio... |
| Features |
• Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: Marking is “YB –”. 3SK318 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 ±6 ±6 20 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source bre... |
| Document |
 3SK318 Data Sheet
PDF 54.48KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3SK317 |
Hitachi Semiconductor |
UHF / VHF RF Amplifier |
|
| 2 | 3SK319 |
Hitachi Semiconductor |
UHF RF Amplifier |
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| 3 | 3SK300 |
Hitachi Semiconductor |
Silicon N-Channel Transistor |
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| 4 | 3SK302 |
Panasonic |
Silicon N-Channel MOS |
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| 5 | 3SK306 |
Panasonic |
Silicon N-Channel MOS |
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| 6 | 3SK309 |
Hitachi Semiconductor |
UHF RF Amplifier |
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