Hitachi Semiconductor 2SJ Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SJ181	Hitachi Semiconductor	P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut
2	2SJ181S	Hitachi Semiconductor	P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut
3	J114	Hitachi Semiconductor	2SJ114
4	2SJ78	Hitachi Semiconductor	Silicon P-Channel MOS FET • • • • Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB D G 1 2 3 1. Gate 2. Source (Flange) 3. Drain S 2SJ76, 2SJ77, 2SJ78, 2SJ79 Absolute Maximum Ratings (Ta = 25°
5	2SJ181L	Hitachi Semiconductor	P-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolut
6	2SJ539	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.16 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ539 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vo
7	2SJ161	Hitachi Semiconductor	P-Channel MOSFET • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline
8	2SJ162	Hitachi Semiconductor	P-Channel MOSFET • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline
9	2SJ506L	Hitachi Semiconductor	P-Channel MOSFET • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices. Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ506(L), 2SJ506(S) Absolute
10	2SJ113	Hitachi Semiconductor	SILICON P-CHANNEL MOS FET
11	2SJ181	Hitachi Semiconductor	Silicon P-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SJ181(
12	2SJ48	Hitachi Semiconductor	P-Channel MOSFET
13	2SJ527	Hitachi Semiconductor	P-Channel MOSFET • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) I
14	2SJ528L	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
15	2SJ529	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching Outline DPAK –2 4 D 4 1 2 G 3 1 2 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source
16	2SJ533	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220CFM D G 1 2 S 3 1. Gate 2. Drain 3. Source 2SJ533 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltag
17	2SJ548	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO –220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SJ548 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Ga
18	2SJ549S	Hitachi Semiconductor	Silicon P-Channel MOSFET • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ549(L),2SJ549(S) Absolute Maximum Ratings (Ta = 25°C) I
19	2SJ116	Hitachi Semiconductor	SILICON P-CHANNEL MOS FET
20	2SJ117	Hitachi Semiconductor	P-Channel MOSFET • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ1