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2SJ181 |
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| Part Number | 2SJ181 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolute Maximum Rat. |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse) * I DR Pch * Tch Tstg 2 1 Ratings –600 ±15 . |
| Datasheet |
 2SJ181 Data Sheet
PDF 46.73KB |
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2SJ181 |
| Part Number | 2SJ181 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon P-Channel MOS FET |
| Description | ( DataSheet : www.DataSheet4U.com ) 2SJ181(L), 2SJ181(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 . |
| Features |
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 www.DataSheet4U.com 2SJ181(L), 2SJ181(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain . |
2SJ181 |
| Part Number | 2SJ181 |
| Manufacturer | Renesas |
| Title | Silicon P-Channel MOSFET |
| Description | High speed power switching Preliminary Datasheet R07DS0395EJ0300 (Previous: REJ03G0848-0200) Rev.3.00 May 16, 2011 Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: . |
| Features |
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK (L)-(1) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 123 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ180 |
NEC |
P-Channel MOSFET |
|
| 2 | 2SJ181L |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 3 | 2SJ181L |
Renesas |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ181S |
Renesas |
Silicon P-Channel MOSFET |
|
| 5 | 2SJ181S |
Hitachi Semiconductor |
P-Channel MOSFET |
|
| 6 | 2SJ182 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET |
|
| 7 | 2SJ184 |
NEC |
P-Channel MOSFET |
|
| 8 | 2SJ185 |
NEC |
P-Channel MOSFET |
|
| 9 | 2SJ185 |
Kexin |
P-Channel MOSFET |
|
| 10 | 2SJ186 |
Hitachi Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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