Hitachi Semiconductor 2SC Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SC461	Hitachi Semiconductor	Silicon NPN Transistor B dB dB Unit V V V µA µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f
2	C2611	Hitachi Semiconductor	2SC2611 current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collecto
3	C1906	Hitachi Semiconductor	2SC1906 0 — —V IC = 3 mA, RBE = ∞ — —V IE = 10 µA, IC = 0 — — 1000 1.0 0.2 0.5 — — 2.0 1.0 µA MHz pF V VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IC = 20 mA, IB = 4 mA 10 25 ps VCB = 10 V, IC = 10
4	C3374	Hitachi Semiconductor	2SC3374
5	2SC1212A	Hitachi Semiconductor	Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE*
6	2SC4463	Hitachi Semiconductor	Silicon NPN Transistor 0 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, emitter common, f = 1 MHz VCC = 12 V, IC = 2 mA, f = 200 MHz f OSC = 230 Mhz (0 dBm), f out = 30 MHz Conversion gain Noise figure Note: Marking is “HC”. CG NF — — 2
7	2SC458	Hitachi Semiconductor	NPN TRANSISTOR — — — 0.5 0.5 320 0.2 0.75 — 3.5 10 — — — — µS V V MHz pF dB kΩ × 10 –6 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE
8	C5252	Hitachi Semiconductor	2SC5252 • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO –3P •FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 www.DataSheet4U.com 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collecto
9	2SC1213AK	Hitachi Semiconductor	Silicon NPN Transistor ctor to emitter saturation voltage Base to emitter satruation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time VBE VCE(sat) VBE(sat) Cob fT t on t off t stg 60 10 V V V pF MHz µS µS µS VCE = 3 V,
10	C4367	Hitachi Semiconductor	2SC4367 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4367 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Co
11	2SC1212	Hitachi Semiconductor	Silicon NPN Transistor IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 — 60 20 — — — Typ — — — — — — 0.65 0.75 160 DC current tarnsfer ratio hFE*
12	2SC1213	Hitachi Semiconductor	Silicon NPN Transistor E = 0 VCE = 3 V, IC =10 mA VCE = 3 V, I C = 500 mA2 I C = 150 mA, I B = 15 mA2 VCE = 3 V, IC = 10 mA Typ — — — — — — 0.2 0.64 35 35 4 — 60 10 — — DC current tarnsfer ratio hFE* hFE Collector to emitter saturation voltage VCE(sat) Base to emitt
13	2SC2611	Hitachi Semiconductor	Silicon NPN Transistor or to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO hFE VCE(sat) fT Cob Maximum Collector Dissipation Curve 1.5 Collector power dissipation Pc (W) 1.0 Collector Current IC (mA) Typical Output Characte
14	C2278	Hitachi Semiconductor	2SC2278
15	C1775	Hitachi Semiconductor	2SC1775 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 25 V, IE = 0, f = 1 MHz VCE = 6 V, I C = 50 µA, Rg = 50 kΩ f = 10 Hz f=1 kHz Typ — — — — — — — 200 1.6 — 90 — — DC current transfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturat
16	C2979	Hitachi Semiconductor	2SC2979 7 — — — — — — — — — — — — — — — Max Unit —V —V —V 100 µA 100 µA — — 1.0 V 1.5 V 1.0 µs 3.0 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 3 A, IB1 = 0.9 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 7
17	2SC1162	Hitachi Semiconductor	Silicon NPN Transistor current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 — — — V V MHz VCE = 2 V, IC = 1.5 A (pulse test) I C = 2 A, I
18	2SC1345K	Hitachi Semiconductor	Silicon NPN Transistor tter saturation voltage Collector output capacitance Gain bandwidth product Noise figure V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) Cob fT NF 250 — — — — — — V V pF MHz dB dB VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCB = 10 V, IE = 0, f = 1 MHz V
19	2SC2463	Hitachi Semiconductor	Silicon NPN Transistor E D DD 250 to 500 E DE 400 to 800 V(BR)EBO I CBO I EBO hFE* 250 — — F DF VCE(sat) VBE V V I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA 1. The 2SC2463 is grouped by h FE as follows. 600 to 1200 See characteristic curves of 2SC1345. 2 2SC2463
20	2SC3793	Hitachi Semiconductor	Silicon NPN Transistor IC = 5 mA I C = 20 mA, IB = 4 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 10 V, IC = 5 mA 2 2SC3793 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) 16 160 12 120 8 80 40