Hitachi K23 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SK2329	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3
2	2SK2329S	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3
3	2SK2328	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2328 Absolute Maximum Ratings (Ta =
4	2SK2373	Hitachi Semiconductor	N-Channel MOSFET • • • • • Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25°C
5	4AK23	Hitachi Semiconductor	Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver Outline SP-12TA 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 12 3 4 5 6 7 8 9
6	K2334	Hitachi	Silicon N-Channel MOS FET • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Dr
7	2SK2315	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source
8	2SK2329L	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3
9	2SK2334L	Hitachi	Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter • Avalanche Ratings Outline DPAK-2 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Sou
10	2SK2330S	Hitachi	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximu
11	2SK2330L	Hitachi	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximu
12	2SK2393	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK2393 Absolute
13	3SK239A	Hitachi Semiconductor	GaAs Dual Gate MES FET • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain curr
14	2SK2390	Hitachi Semiconductor	Silicon N-Channel MOS FET • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source
15	2SK2334	Hitachi	Silicon N-Channel MOS FET • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Dr
16	2SK2330	Hitachi	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching regulator, DC-DC converter Outline HDPAK 4 4 1 2 3 D1 2 3 G 1. Gate 2. Drain 3. Source S 4. Drain November 1996 2SK2330(L), 2SK2330(S) Absolute Maximu
17	2SK2334S	Hitachi	Silicon N-Channel MOSFET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter • Avalanche Ratings Outline DPAK-2 4 4 1 23 D 12 3 1. Gate G 2. Drain 3. Sou
18	3SK233	Hitachi Semiconductor	Silicon N-Channel Dual Gate MOS FET • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit —————————————————————— – Drain to source voltage VDS 12 V —————————————————————— – Gate 1 to source voltag