2SK2329 |
Part Number | 2SK2329 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK2329(L), 2SK2329(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be dri... |
Features |
• • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Suitable for Switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 2 3 2SK2329(L), 2SK2329(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* ... |
Document |
2SK2329 Data Sheet
PDF 47.52KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK2320 |
Toshiba |
N-Channel MOSFET | |
2 | 2SK2324 |
Panasonic |
Silicon N-Channel Power F-MOS | |
3 | 2SK2326 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK2328 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2328 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK2329L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |