Hitachi K22 Hoja de datos

No.	parte #	Fabricante	Descripción
1	K2225	Hitachi Semiconductor	2SK2225 • High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline TO-3PFM ADE-208-140 1st. Edition D G 1 2 3 1. Gate 2. Drain 3. Source S
2	K2221	Hitachi Semiconductor	2SK2221 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3
3	2SK2225	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum
4	4AK22	Hitachi Semiconductor	Silicon N-Channel Power MOS FET Array • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp dri
5	K227	Hitachi	Silicon N-Channel MOSFET
6	HZK22	Hitachi	Silicon Epitaxial Planar Zener Diodes • Low leakage, low zener impedance and maximum power dissipation of 500mW. • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application. • LLD Package is suitable for high density surface mounting and high speed assembly. Orde
7	2SK2202	Hitachi Semiconductor	Silicon N-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2202 Absolute
8	2SK2203	Hitachi Semiconductor	Silicon N-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2203 Absolute
9	2SK2212	Hitachi Semiconductor	Silicon N-Channel MOS FET • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Moter Control Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK2212 Absolute Maximum Rating
10	2SK2221	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange)
11	K2220	Hitachi Semiconductor	2SK2220 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3
12	3SK228	Hitachi Semiconductor	Silicon NPN Triple Diffused 10 µA, VG2S = VDS = 0 I G2 = –10 µA, VG1S = VDS = 0 VG1S = –5 V, VG2S = VDS = 0 VG2S = –5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = VG2S = 0 VDS = 5 V, VG2S = 0, I D = 100 µA VDS = 5 V, VG1S = 0, I D = 100 µA VDS = 5 V, VG2S = 1 V, I D = 10 mA, f = 1 kHz V
13	K226	Hitachi	Silicon N-Channel MOSFET
14	HP31K222MRY	Hitachi	SNAP-IN TYPE ALUMINUM ELECTROLYTIC CAPACITORS • Rendered about 20% to 30% smaller than the preceding HPR and HFR type predecessor thanks to etching foil magnification increase. Product Specifications Items Temperature range –40°C ~ +85°C Specifications Capacitance tolerance Rated voltage Lea
15	2SK2216	Hitachi Semiconductor	Silicon N-Channel MOS FET • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to sourc
16	2SK2220	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • • • High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Outline TO-3P D G 1 2 3 1. Gate 2. Source (Flange)
17	2SK2247	Hitachi Semiconductor	Silicon N-Channel MOSFET • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4.
18	K2247	Hitachi Semiconductor	2SK2247 • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1. Gate 2. Drain 3. Source 4.
19	2SK225	Hitachi	Silicon N-Channel MOSFET
20	2SK226	Hitachi	Silicon N-Channel MOSFET