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2SK2216 |
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| Part Number | 2SK2216 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860... |
| Features |
• High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 60 ±10 20 150 150 –55 to +150 Unit V V A W °C °C Electrical Characteristics (TC = 25°C) Item Drain leakage current* 1 1 1 Symbol Min I DSS I GSS VGS(off) VDS(on) |yfs| Ciss Coss POUT ηD 1 T... |
| Document |
 2SK2216 Data Sheet
PDF 47.53KB |
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