| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Dynamic Random Access Memory • • • Single 5 V ( ±10%) High speed — Access time: 70 ns/80 ns (max) Low power dissipation — Active mode: 660 mW/578 mW (max) — Standby mode: 11 mW (max) 1.1 mW (max) (L-version) Fast page mode capability 1024 refresh cycles: 16 ms 128 ms (L-version) |
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Hitachi |
SDRAM |
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Hitachi |
CMOS DRAM |
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Hitachi |
(HM5116400 / HM5117400) 4M DRAM • • • Single 5 V (±10%) Access time: 50 ns/60 ns/70 ns (max) Power dissipation Active mode : 495 mW/440 mW/385 mW (max) (HM5116400 Series) : 550 mW/495 mW/440 mW (max) (HM5117400 Series) Standby mode : 11 mW (max) : 0.83 mW (max) (L-version) Fast |
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Hitachi |
500K x 8-Bit DRAM Sheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.Da |
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Hitachi Semiconductor |
16-Bit Dynamic Random Access Memory |
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Hitachi Semiconductor |
1/048/576-word X 4-bit Dynamic Random Access Memory • Single 5 V (±10%) • High speed — Access time 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode 605 mW/550 mW/495 mW (max) — Standby mode 11 mW (max) 0.55 mW (max) (L-version) • Fast page mode capability • 1024 refresh cycles : 16 ms 102 |
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Hitachi Semiconductor |
1/048/576-word X 4-bit Dynamic Random Access Memory • Single 5 V (±10%) • High speed — Access time 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode 605 mW/550 mW/495 mW (max) — Standby mode 11 mW (max) 0.55 mW (max) (L-version) • Fast page mode capability • 1024 refresh cycles : 16 ms 102 |
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Hitachi Semiconductor |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM • • • • • • • • • Single chip wide bit solution (× 32) 3.3 V power supply Clock frequency: 100 MHz (max) LVTTL interface Extremely small foot print: 1.27 mm pitch Package: BGA (BP-108) 4 banks can operate simultaneously and independently Burst read |
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Hitachi Semiconductor |
256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM • • • • • • • • • Single chip wide bit solution (× 64/× 32) 3.3 V power supply Clock frequency: 100 MHz (max) LVTTL interface Extremely small foot print: 1.27 mm pitch Package: BGA (BP-108) 4 banks can operate simultaneously and independently Burst |
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Hitachi |
16M FP DRAM |
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Hitachi Semiconductor |
262144-word x 16-bit Dynamic Random Access Memory • • • Single 5 V (±10%) (HM51(S)4260C-6/7/8) (±5%) (HM51(S)4260C-6R) High speed — Access time: 60 ns/70 ns/80 ns (max) Low power dissipation — Active mode: 825 mW/788 mW/770 mW/688 mW (max) — Standby mode: 11 mW (max) (HM51(S)4260C-6/7/8) 10.5 mW (ma |
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Hitachi Semiconductor |
(HM51W18160A / HM51W16160A) DRAM |
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Hitachi Semiconductor |
(HM51W18160A / HM51W16160A) DRAM |
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Hitachi Semiconductor |
(HM51W16165 / HM51W18165) 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
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Hitachi Semiconductor |
(HM51W16165 / HM51W18165) 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh |
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Hitachi Semiconductor |
4M DRAM |
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Hitachi Semiconductor |
1M-Bit x 4-BIT DYNAMIC RAM |
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Hitachi |
500K x 8-Bit DRAM Sheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com www.DataSheet4U.com DataSheet 4 U .com www.DataSheet4U www.Da |
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Hitachi Semiconductor |
(HM514170D / HM514270D) Dynamic RAM • Single 5 V supply: 5 V ± 10% • Access time: 60 ns/70 ns/80 ns (max) • Low power dissipation Active mode: 825 mW/660 mW/578 mW (max) (HM51(S)4170D Series) 825 mW/770 mW/688 mW (max) (HM51(S)4270D Series) Standby mode: 11 mW (max) 1.1 mW (max) (L |
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Desde 2024. D4U Semiconductor.
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