| Description | Pin name A0 to A9 A0 to A9 I/O1 to I/O4 RAS CAS WE OE VCC VSS Function Address input Refresh address input Data-in/Data-out Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS Row Driver Row Driver RAS Control Circuit 256 k Memory Ar... |
| Features |
• Single 5 V (±10%) • High speed — Access time 60 ns/70 ns/80 ns (max) • Low power dissipation — Active mode 605 mW/550 mW/495 mW (max) — Standby mode 11 mW (max) 0.55 mW (max) (L-version) • Fast page mode capability • 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version) • 3 variations of refresh — RAS-only refresh — CAS-before-RAS refresh — Hidden refresh HM514400B/BL, HM514400C/... |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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Hitachi Semiconductor |
1M-Bit x 4-BIT DYNAMIC RAM |
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Hitachi Semiconductor |
1M-Bit x 4-BIT DYNAMIC RAM |
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Hitachi Semiconductor |
1M-Bit x 4-BIT DYNAMIC RAM |
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Hitachi Semiconductor |
1/048/576-word X 4-bit Dynamic Random Access Memory |
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Hitachi Semiconductor |
1/048/576-word X 4-bit Dynamic Random Access Memory |
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Hitachi Semiconductor |
1/048/576-word X 4-bit Dynamic Random Access Memory |
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Hitachi Semiconductor |
Dynamic Random Access Memory |
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Hitachi Semiconductor |
(HM514170D / HM514270D) Dynamic RAM |
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Hitachi |
CMOS DRAM |
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Hitachi Semiconductor |
16-Bit Dynamic Random Access Memory |
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