| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Harris Corporation |
N-Channel MOSFET |
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Harris Corporation |
P-Channel MOSFET Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Litera |
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Harris Corporation |
P-Channel MOSFET Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Litera |
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Harris Corporation |
(IRF510 - IRF513) N-Channel Power MOSFETs • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “G |
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Harris Corporation |
(IRF510 - IRF513) N-Channel Power MOSFETs • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “G |
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Harris Corporation |
N-Channel Power MOSFET |
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Harris Corporation |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated |
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Harris Corporation |
N-Channel Power MOSFET • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information |
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Harris Corporation |
P-Channel MOSFET Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Litera |
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Harris Corporation |
(IRF510 - IRF513) N-Channel Power MOSFETs • 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “G |
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Harris Corporation |
N-Channel Power MOSFET |
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Harris Corporation |
N-Channel MOSFET |
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Harris Corporation |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated |
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|
Harris Corporation |
P-Channel MOSFET Description • -15A and -19A, -80V and -100V • rDS(ON) = 0.20Ω and 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Litera |
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Harris Corporation |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated |
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Desde 2024. D4U Semiconductor.
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