IRF511 |
Part Number | IRF511 |
Manufacturer | Harris Corporation |
Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo... |
Features |
• 4.9A, and 5.6A, 80V and 100V • rDS(ON) = 0.54Ω and 0.74Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513 PACKAGE TO-220AB TO-220AB TO-220AB TO-220AB BRAND IRF510 IRF511 IRF512 IRF513 G S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These de... |
Document |
IRF511 Data Sheet
PDF Direct Link |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRF510 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | IRF510 |
Fairchild Semiconductor |
N-Channel Power MOSFET | |
3 | IRF510 |
Vishay |
Power MOSFET | |
4 | IRF510 |
International Rectifier |
Power MOSFET | |
5 | IRF510A |
Fairchild Semiconductor |
Advanced Power MOSFET | |
6 | IRF510PBF |
International Rectifier |
HEXFET POWER MOSFET |