| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
HOTTECH |
N-Channel MOSFET Drain) Steady State Notes: a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. Symbol RthJA RthJF Typical 80 40 Maximum 100 60 Unit V A W °C Unit °C/W GUANGDONG HOTT |
|
|
|
|
HOTTECH |
Plastic-Encapsulate Mosfets Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Volta |
|
Desde 2024. D4U Semiconductor.
|