HOTTECH 2SD Hoja de datos

No.	parte #	Fabricante	Descripción
1	2SD1005	HOTTECH	GENERAL PURPOSE TRANSISTOR  Small Flat Package  High Breakdown Voltage  Excellent DC Current Gain Linearity HED1005(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 100 Collector-Em
2	2SD965A	HOTTECH	Transistor  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissipation and Current  Mini Power Type Package MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 40 Collector-Emitter Vol
3	2SD1119	HOTTECH	NPN Transistor • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply. Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co
4	2SD2413	HOTTECH	GENERAL PURPOSE TRANSISTOR  High Collector to Base Voltage VCBO  High Collector to Emitter Voltage VCEO  Large Collector Power Dissipation PC  Low Collector to Emitter Saturation Voltage VCE(sat) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value
5	2SD2150	HOTTECH	NPN Transistor Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 2SD2150(NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-E