| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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HOTTECH |
PNP Transistor Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Co |
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HOTTECH |
GENERAL PURPOSE TRANSISTOR Small Flat Package High Current Application High Transition Frequency HEA1664(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUMRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -35 Collector-Emitter Vol |
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HOTTECH |
NPN Transistor • Suitable for output stage of3 watts Amplifier • Suitable flat package • High DC current gain • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884 2SA1204 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector |
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HOTTECH |
PNP Transistor Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. Plastic-Encapsulate Transistors 2SA1162(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Co |
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HOTTECH |
PNP Transistor • Low saturation voltage • Excellent DC current gain characteristics • Complements to 2SC4672 Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissip |
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HOTTECH |
GENERAL PURPOSE TRANSISTOR Small Flat Package High Current Application High Voltage High Transition Frequency MAXIMUMRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -120 Collector-Emitter Voltage VCEO -120 Emitter |
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HOTTECH |
PNP Transistor • Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884 2SA1203 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitte |
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Desde 2024. D4U Semiconductor.
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