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2SA812 |
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| Part Number | 2SA812 |
| Manufacturer | HOTTECH |
| Description | Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-... |
| Features |
Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V
2SA812(PNP)
MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-60
VCEO
-50
VEBO
-5
IC -100 PC 200
TJ 150
Tstg -55 to +150
Unit
V V V mA mW
1. BASE 2. EMITTER 3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector... |
| Document |
 2SA812 Data Sheet
PDF 299.61KB |
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Desde 2024. D4U Semiconductor.
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