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HOOYI |
N-Channel MOSFET • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Power |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel MOSFET • 60V/190A RDS(ON) = 3.2 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Manag |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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Hooyi |
(HY3842 / HY3845) PWM controller • • • • Low Start-Up and Operating Current High Current Totem Pole Output Under voltage Lockout With Hysteresis Operating Frequency Up To 500KHz BLOCK DIAGRAM (toggle flip flop used only in HY3844, HY3845) Absolute Maximum Ratings Characteristic Su |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2 |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel MOSFET |
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HOOYI |
N-Channel MOSFET • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-26 |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel Enhancement Mode MOSFET • • • • 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications • • Switching application Power Mana |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2 |
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Hooyi |
(HY3842 / HY3845) PWM controller • • • • Low Start-Up and Operating Current High Current Totem Pole Output Under voltage Lockout With Hysteresis Operating Frequency Up To 500KHz BLOCK DIAGRAM (toggle flip flop used only in HY3844, HY3845) Absolute Maximum Ratings Characteristic Su |
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HOOYI |
N-Channel MOSFET • 30V/100A RDS(ON)= 3.5mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available Pin Description DS G TO-220FB-3L DS G TO-26 |
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HOOYI |
N-Channel MOSFET • 80V/120A R= DS(ON) 7.0 mΩ (typ.) @ V =10V GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Power |
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HOOYI |
N-Channel Enhancement Mode MOSFET Pin Description • 100V/160A RDS(ON) = 4.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications • Switching application • Power Management for Inverter Sys |
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HOOYI |
N-Channel Enhancement Mode MOSFET |
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HOOYI |
N-Channel Enhancement Mode MOSFET • 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Manag |
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Desde 2024. D4U Semiconductor.
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