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HY3306P |
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| Part Number | HY3306P |
| Manufacturer | HOOYI |
| Description | DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3306 HY3306 YYÿ XXXJWW... |
| Features |
• 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3306 HY3306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination f... |
| Document |
 HY3306P Data Sheet
PDF 3.80MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HY3306B |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | HY3312B |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | HY3312M |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | HY3312P |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | HY3312PM |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
| 6 | HY3312PS |
HOOYI |
N-Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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