| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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GeneSiC |
Silicon Carbide Schottky Diode • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of |
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GeneSiC |
Silicon Carbide Schottky Diode • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of |
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Desde 2024. D4U Semiconductor.
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